VS-MURB820-M3 Vishay Semiconductors
auf Bestellung 5086 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.06 EUR |
| 29+ | 1.81 EUR |
| 100+ | 1.45 EUR |
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Technische Details VS-MURB820-M3 Vishay Semiconductors
Description: DIODE GEN PURP 200V 8A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote VS-MURB820-M3 nach Preis ab 0.78 EUR bis 2.08 EUR
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VS-MURB820-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 8A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 4496 Stücke: Lieferzeit 21-28 Tag (e) |
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