VS-MURB820TRR-M3

VS-MURB820TRR-M3 Vishay General Semiconductor - Diodes Division


vs-murb820-m3.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details VS-MURB820TRR-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 200V 8A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.

Weitere Produktangebote VS-MURB820TRR-M3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
VS-MURB820TRR-M3 VS-MURB820TRR-M3 Hersteller : Vishay Semiconductors vs-murb820-m3.pdf Rectifiers 200V 8A IF (TO-263AB) 100A IFSM
Produkt ist nicht verfügbar