Technische Details VS-SD303C10S10C Vishay
Description: DIODE GEN PURP 1KV 350A DO200AA, Packaging: Bulk, Package / Case: DO-200AA, A-PUK, Mounting Type: Clamp On, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1 µs, Technology: Standard, Current - Average Rectified (Io): 350A, Supplier Device Package: DO-200AA, A-PUK, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A, Current - Reverse Leakage @ Vr: 35 mA @ 1000 V.
Weitere Produktangebote VS-SD303C10S10C
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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VS-SD303C10S10C | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1000 V |
Produkt ist nicht verfügbar |
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VS-SD303C10S10C | Hersteller : Vishay Semiconductors | Rectifiers 1000 Volt 350 Amp |
Produkt ist nicht verfügbar |