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VSSB410S-M3/5BT

VSSB410S-M3/5BT Vishay General Semiconductor - Diodes Division

vssb410s-m3.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.9A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
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Technische Details VSSB410S-M3/5BT Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 100V 1.9A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 230pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.9A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A, Current - Reverse Leakage @ Vr: 250 µA @ 100 V.

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VSSB410S-M3/5BT Hersteller : Vishay General Semiconductor vssb410s-m3.pdf Schottky Diodes & Rectifiers 4A,100V,TRENCH SKY RECT.
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