YJ10N60CZ YANGJIE TECHNOLOGY

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 178W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 0.8Ω, Mounting: THT, Gate charge: 65nC, Kind of package: tube, Kind of channel: enhanced, Heatsink thickness: max. 1.33mm, Anzahl je Verpackung: 1 Stücke.