YJ2N60CI YANGJIE TECHNOLOGY

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 2A, Pulsed drain current: 8A, Power dissipation: 23W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 4.5Ω, Mounting: THT, Gate charge: 14nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.