YJ2N65CZ YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 54W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.33mm
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details YJ2N65CZ YANGJIE TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 54W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 2A, Pulsed drain current: 8A, Power dissipation: 54W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 4.7Ω, Mounting: THT, Gate charge: 14nC, Kind of package: tube, Kind of channel: enhancement, Heatsink thickness: max. 1.33mm.