YJ4N65CP YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details YJ4N65CP YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 51W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 51W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 2.6Ω, Mounting: SMD, Gate charge: 20nC, Kind of package: reel; tape, Kind of channel: enhancement.