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YJG53G06A YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB82531EE98ABF2272F324D8BF&compId=YJG53G06A.pdf?ci_sign=bb68b75d917e5e4f40d41e8c553f8cb2fab3e421

Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 34A; 30W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34A
Pulsed drain current: 160A
Power dissipation: 30W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement

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Technische Details YJG53G06A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 34A; 30W, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 34A, Pulsed drain current: 160A, Power dissipation: 30W, Case: DFN5060-8, Gate-source voltage: ±20V, On-state resistance: 12mΩ, Mounting: SMD, Gate charge: 31nC, Kind of package: reel; tape, Kind of channel: enhancement.