Suchergebnisse für "YJG70G06A" : 2

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YJG70G06A YANGJIE TECHNOLOGY pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8BFEC4AA3541E0C8&compId=YJG70G06A.pdf?ci_sign=aa6b22e13f025f15e7c523ec63e5d796b97674b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 44A; 28W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Pulsed drain current: 210A
Power dissipation: 28W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
YJG70G06A pVersion=0046&contRep=ZT&docId=005056AB90B41EDC8BFEC4AA3541E0C8&compId=YJG70G06A.pdf?ci_sign=aa6b22e13f025f15e7c523ec63e5d796b97674b9
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 44A; 28W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Pulsed drain current: 210A
Power dissipation: 28W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH