YJL03G10A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 121A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.29 EUR |
| 290+ | 0.24 EUR |
| 796+ | 0.09 EUR |
| 3000+ | 0.054 EUR |
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Technische Details YJL03G10A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3A, Pulsed drain current: 121A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.14Ω, Mounting: SMD, Gate charge: 4.3nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote YJL03G10A nach Preis ab 1.1 EUR bis 1.1 EUR
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YJL03G10A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 121A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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