Produkte > YANGJIE TECHNOLOGY > YJL2301C
YJL2301C

YJL2301C YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC191F4314438BF&compId=YJL2301C.pdf?ci_sign=6f7dd30c74d58eec634bd579ced656b8aab09539 Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -2.7A; 1W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1120+0.064 EUR
1750+0.041 EUR
1910+0.038 EUR
1970+0.036 EUR
2020+0.035 EUR
Mindestbestellmenge: 1120
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details YJL2301C YANGJIE TECHNOLOGY

Description: P-CH MOSFET 20V 3.4A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V.

Weitere Produktangebote YJL2301C nach Preis ab 0.034 EUR bis 0.49 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
YJL2301C YJL2301C Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
45+0.4 EUR
100+0.21 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
YJL2301C Hersteller : Yangjie Electronic Technology YJL2301C%20Rev%203.0.pdf P-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 999000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.034 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
YJL2301C Hersteller : Yangzhou Yangjie Electronic Technology Co., Ltd. YJL2301C%20Rev%203.0.pdf MOSFET SOT-23 P Channel 20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
YJL2301C YJL2301C Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
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