YJL3407A Yangzhou Yangjie Electronic Technology Co.,Ltd
Hersteller: Yangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
auf Bestellung 1652 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 35+ | 0.75 EUR |
| 50+ | 0.52 EUR |
| 103+ | 0.25 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.15 EUR |
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Technische Details YJL3407A Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V.
Weitere Produktangebote YJL3407A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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YJL3407A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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YJL3407A | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 4.1A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V |
Produkt ist nicht verfügbar |
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YJL3407A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |