YJQ15GP10A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 120mΩ
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 120mΩ
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9372 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
174+ | 0.41 EUR |
240+ | 0.3 EUR |
320+ | 0.22 EUR |
339+ | 0.21 EUR |
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Technische Details YJQ15GP10A YANGJIE TECHNOLOGY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A, Type of transistor: P-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -9.5A, Pulsed drain current: -45A, Power dissipation: 17.2W, Case: DFN3.3x3.3 EP, Gate-source voltage: ±20V, On-state resistance: 120mΩ, Mounting: SMD, Gate charge: 3.98nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote YJQ15GP10A nach Preis ab 0.21 EUR bis 0.41 EUR
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YJQ15GP10A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A Type of transistor: P-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: -100V Drain current: -9.5A Pulsed drain current: -45A Power dissipation: 17.2W Case: DFN3.3x3.3 EP Gate-source voltage: ±20V On-state resistance: 120mΩ Mounting: SMD Gate charge: 3.98nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 9372 Stücke: Lieferzeit 14-21 Tag (e) |
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