Suchergebnisse für "YJS2022A" : 2
Art der Ansicht :
Mindestbestellmenge: 125
Im Einkaufswagen
Stück im Wert von UAH
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YJS2022A | YANGJIE TECHNOLOGY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER MV; unipolar; 20V; -10.4A; 3W Type of transistor: P-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 20V Drain current: -10.4A Pulsed drain current: -55A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±10V On-state resistance: 26mΩ Mounting: SMD Gate charge: 72.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 8787 Stücke: Lieferzeit 14-21 Tag (e) |
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| YJS2022A |
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Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER MV; unipolar; 20V; -10.4A; 3W
Type of transistor: P-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -10.4A
Pulsed drain current: -55A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 72.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER MV; unipolar; 20V; -10.4A; 3W
Type of transistor: P-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -10.4A
Pulsed drain current: -55A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 72.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8787 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 275+ | 0.26 EUR |
| 400+ | 0.18 EUR |
| 589+ | 0.12 EUR |
| 736+ | 0.097 EUR |
| 782+ | 0.092 EUR |