ZVN4310GTA Diodes Zetex
auf Bestellung 66000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.94 EUR |
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Technische Details ZVN4310GTA Diodes Zetex
Description: MOSFET N-CH 100V 1.67A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.67A (Ta), Rds On (Max) @ Id, Vgs: 540mOhm @ 3.3A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote ZVN4310GTA nach Preis ab 0.69 EUR bis 2.62 EUR
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ZVN4310GTA | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V 1.67A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.67A (Ta) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4310GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 1.67A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN4310GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 1.67A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN4310GTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 1.67A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.67A (Ta) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 70135 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4310GTA | Hersteller : Diodes Incorporated |
MOSFET N-Chnl 100V |
auf Bestellung 7245 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZVN4310GTA | Hersteller : Diodes Inc./Zetex |
MOSFET N-CH 100V 1.67A SOT223 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN4310GTA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.67A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.67A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ZVN4310GTA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.67A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.67A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |