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ZXMN2A01E6TA

ZXMN2A01E6TA Diodes Incorporated

ZXMN2A01E6.pdf Hersteller: Diodes Incorporated
MOSFET 20V N-Chnl UMOS
auf Bestellung 5708 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
51+1.03 EUR
57+ 0.92 EUR
100+ 0.75 EUR
500+ 0.63 EUR
1000+ 0.54 EUR
3000+ 0.5 EUR
6000+ 0.49 EUR
Mindestbestellmenge: 51
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Technische Details ZXMN2A01E6TA Diodes Incorporated

Description: MOSFET N-CH 20V 2.5A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: SOT-23-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V.

Weitere Produktangebote ZXMN2A01E6TA nach Preis ab 0.64 EUR bis 1.51 EUR

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ZXMN2A01E6TA ZXMN2A01E6TA Hersteller : Diodes Incorporated ZXMN2A01E6.pdf Description: MOSFET N-CH 20V 2.5A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
auf Bestellung 1633 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.51 EUR
20+ 1.32 EUR
100+ 1.01 EUR
500+ 0.8 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 18
ZXMN2A01E6TA ZXMN2A01E6.pdf
auf Bestellung 967 Stücke:
Lieferzeit 21-28 Tag (e)
ZXMN2A01E6TA ZXMN2A01E6TA Hersteller : Diodes Inc 34084599566167564zxmn2a01e6.pdf Trans MOSFET N-CH 20V 2.5A 6-Pin SOT-23 T/R
Produkt ist nicht verfügbar
ZXMN2A01E6TA ZXMN2A01E6TA Hersteller : Diodes Incorporated ZXMN2A01E6.pdf Description: MOSFET N-CH 20V 2.5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
Produkt ist nicht verfügbar