Produkte > DIODES INCORPORATED > ZXMN2A04DN8TA
ZXMN2A04DN8TA

ZXMN2A04DN8TA Diodes Incorporated

ZXMN2A04DN8.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
500+2.96 EUR
Mindestbestellmenge: 500
Produktrezensionen
Produktbewertung abgeben

Technische Details ZXMN2A04DN8TA Diodes Incorporated

Description: MOSFET 2N-CH 20V 5.9A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.9A, Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote ZXMN2A04DN8TA nach Preis ab 2.25 EUR bis 4.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ZXMN2A04DN8TA ZXMN2A04DN8TA Hersteller : Diodes Incorporated ZXMN2A04DN8.pdf MOSFET Dl 20V N-Chnl UMOS
auf Bestellung 500 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.68 EUR
14+ 3.93 EUR
100+ 3.12 EUR
250+ 3.09 EUR
500+ 2.6 EUR
1000+ 2.25 EUR
Mindestbestellmenge: 12
ZXMN2A04DN8TA ZXMN2A04DN8TA Hersteller : Diodes Incorporated ZXMN2A04DN8.pdf Description: MOSFET 2N-CH 20V 5.9A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 644 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.99 EUR
10+ 4.48 EUR
100+ 3.61 EUR
Mindestbestellmenge: 6
ZXMN2A04DN8TA Hersteller : ZETEX ZXMN2A04DN8.pdf SOP 08+PBF
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)