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ZXMN3A01E6TA

ZXMN3A01E6TA Diodes Incorporated

ZXMN3A01E6.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.4A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
auf Bestellung 132000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.53 EUR
6000+ 0.5 EUR
9000+ 0.46 EUR
Mindestbestellmenge: 3000
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Technische Details ZXMN3A01E6TA Diodes Incorporated

Description: MOSFET N-CH 30V 2.4A SOT-23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V.

Weitere Produktangebote ZXMN3A01E6TA nach Preis ab 0.53 EUR bis 1.4 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ZXMN3A01E6TA ZXMN3A01E6TA Hersteller : Diodes Incorporated ZXMN3A01E6.pdf MOSFET 30V N-Chnl UMOS
auf Bestellung 12999 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
40+1.31 EUR
46+ 1.15 EUR
100+ 0.81 EUR
500+ 0.68 EUR
1000+ 0.59 EUR
3000+ 0.53 EUR
Mindestbestellmenge: 40
ZXMN3A01E6TA ZXMN3A01E6TA Hersteller : Diodes Incorporated ZXMN3A01E6.pdf Description: MOSFET N-CH 30V 2.4A SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
auf Bestellung 144787 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.4 EUR
22+ 1.2 EUR
100+ 0.83 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 19
ZXMN3A01E6TA ZXMN3A01E6TA Hersteller : Diodes Inc 35792231929354528zxmn3a01e6.pdf Trans MOSFET N-CH 30V 2.4A 6-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
ZXMN3A01E6TA ZXMN3A01E6.pdf
auf Bestellung 3200 Stücke:
Lieferzeit 21-28 Tag (e)