ZXMP3A16N8TA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 5.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 1.36 EUR |
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Technische Details ZXMP3A16N8TA Diodes Incorporated
Description: MOSFET P-CH 30V 5.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V.
Weitere Produktangebote ZXMP3A16N8TA nach Preis ab 0.91 EUR bis 2.37 EUR
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ZXMP3A16N8TA | Hersteller : Diodes Incorporated |
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auf Bestellung 642 Stücke: Lieferzeit 14-28 Tag (e) |
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ZXMP3A16N8TA | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 5.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V |
auf Bestellung 535 Stücke: Lieferzeit 21-28 Tag (e) |
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auf Bestellung 10075 Stücke: Lieferzeit 21-28 Tag (e) |
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ZXMP3A16N8TA | Hersteller : Diodes Inc |
Trans MOSFET P-CH 30V 5.6A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |