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AC3M0060065D

AC3M0060065D APSEMI

ABUIABA9GAAgntWRvAYo4sm_-wY.pdf Hersteller: APSEMI
Description: SIC MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.07 EUR
11+9.38 EUR
51+8.38 EUR
101+6.03 EUR
Mindestbestellmenge: 2
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Technische Details AC3M0060065D APSEMI

Description: SIC MOSFET N-CH 650V 30A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A, Rds On (Max) @ Id, Vgs: 80mOhm @ 13.2A, 15V, Power Dissipation (Max): 150W, Vgs(th) (Max) @ Id: 3.6V @ 5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V.