AC3M0120065K APSEMI
Hersteller: APSEMIDescription: SIC MOSFET N-CH 650V 23A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.55 EUR |
| 10+ | 7.05 EUR |
| 60+ | 5.64 EUR |
| 240+ | 4.58 EUR |
| 450+ | 3.82 EUR |
| 900+ | 3.51 EUR |
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Technische Details AC3M0120065K APSEMI
Description: SIC MOSFET N-CH 650V 23A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A, Rds On (Max) @ Id, Vgs: 160mOhm @ 6.76A, 15V, Power Dissipation (Max): 97W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1.86mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V.