
ADE4D20120D Analog Power Inc.

Description: DIODE SIL CARB 1200V 33A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 41.91 EUR |
10+ | 37.23 EUR |
100+ | 32.56 EUR |
500+ | 27.79 EUR |
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Technische Details ADE4D20120D Analog Power Inc.
Description: DIODE SIL CARB 1200V 33A TO2473, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 12pF @ 0V, 100kHz, Current - Average Rectified (Io): 33A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V.