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AKS0509

AKS0509 AKYGA SEMI


bss123.pdf Hersteller: AKYGA SEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details AKS0509 AKYGA SEMI

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.36W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 0.17A, Pulsed drain current: 0.68A, Power dissipation: 0.36W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 12Ω, Mounting: SMD, Gate charge: 2.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.

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AKS0509 AKS0509 Hersteller : AKYGA SEMI bss123.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Gate charge: 2.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH