AM4407P-CT

AM4407P-CT Analog Power Inc.


AM4407P.pdf Hersteller: Analog Power Inc.
Description: MOSFET P-CH -30V 15A SOIC-8
Packaging: Strip
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: -1V @ -250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): -30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4441 pF @ -15 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
32+ 0.56 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
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Technische Details AM4407P-CT Analog Power Inc.

Description: MOSFET P-CH -30V 15A SOIC-8, Packaging: Strip, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 9.7A, 4.5V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: -1V @ -250µA, Supplier Device Package: SOIC-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): -30 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4441 pF @ -15 V.