
AM4417P-CT Analog Power Inc.

Description: MOSFET P-CH -60V 11.1A SOIC-8
Packaging: Strip
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9258 pF @ 15 V
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
16+ | 1.16 EUR |
23+ | 0.78 EUR |
100+ | 0.70 EUR |
500+ | 0.55 EUR |
1000+ | 0.45 EUR |
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Technische Details AM4417P-CT Analog Power Inc.
Description: MOSFET P-CH -60V 11.1A SOIC-8, Packaging: Strip, Package / Case: SOIC-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOIC-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9258 pF @ 15 V.