
AM4431P-CT Analog Power Inc.

Description: MOSFET P-CH -30V 21A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 15 V
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
10+ | 1.85 EUR |
15+ | 1.23 EUR |
100+ | 1.11 EUR |
500+ | 0.86 EUR |
1000+ | 0.71 EUR |
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Technische Details AM4431P-CT Analog Power Inc.
Description: MOSFET P-CH -30V 21A SOIC-8, Packaging: Bulk, Package / Case: SOIC-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOIC-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 15 V.