AMC2M0025120D Analog Power Inc.
Hersteller: Analog Power Inc.
Description: SICFET N-CH 1200V 20A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 7 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 1+ | 147.66 EUR |
| 30+ | 121.51 EUR |
| 120+ | 91.66 EUR |
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Technische Details AMC2M0025120D Analog Power Inc.
Description: SICFET N-CH 1200V 20A TO-247, Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 7 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 20V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.