AMTP65H150G4LSGB Analog Power Inc.
Hersteller: Analog Power Inc.
Description: GAN FET N-CH 650V 13A DFN8X8
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Bulk
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Technische Details AMTP65H150G4LSGB Analog Power Inc.
Description: GAN FET N-CH 650V 13A DFN8X8, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN (8x8), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Bulk.