AOB2146L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 47.5W; TO263
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 378 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 83+ | 0.86 EUR |
| 93+ | 0.77 EUR |
| 95+ | 0.75 EUR |
| 101+ | 0.71 EUR |
| 800+ | 0.68 EUR |
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Technische Details AOB2146L ALPHA & OMEGA SEMICONDUCTOR
Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 119W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V.
Weitere Produktangebote AOB2146L nach Preis ab 0.71 EUR bis 1.12 EUR
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AOB2146L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 47.5W; TO263 Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 47.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: TO263 |
auf Bestellung 378 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB2146L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 40V 42A 3-Pin(2+Tab) D2PAK T/R |
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AOB2146L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 119W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V |
Produkt ist nicht verfügbar |