AOB42S60 Alpha & Omega Semiconductor
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Technische Details AOB42S60 Alpha & Omega Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263, Kind of package: reel; tape, Case: TO263, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: SMD, Polarisation: unipolar, Gate charge: 40nC, On-state resistance: 109mΩ, Power dissipation: 417W, Gate-source voltage: ±30V, Drain-source voltage: 600V, Drain current: 37A, Pulsed drain current: 166A, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote AOB42S60
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| AOB42S60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263 Kind of package: reel; tape Case: TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 40nC On-state resistance: 109mΩ Power dissipation: 417W Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 37A Pulsed drain current: 166A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| AOB42S60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 166A; 417W; TO263 Kind of package: reel; tape Case: TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 40nC On-state resistance: 109mΩ Power dissipation: 417W Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 37A Pulsed drain current: 166A |
Produkt ist nicht verfügbar |