AOD6B65MQ1E Alpha & Omega Semiconductor
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Technische Details AOD6B65MQ1E Alpha & Omega Semiconductor
Description: IGBT 8A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 81 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 9ns/91ns, Switching Energy: 110µJ (on), 80µJ (off), Test Condition: 400V, 6A, 50Ohm, 15V, Gate Charge: 13.5 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 96 W.
Weitere Produktangebote AOD6B65MQ1E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| AOD6B65MQ1E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 6A; 38W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 38W Case: TO252 Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| AOD6B65MQ1E | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: IGBT 8A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 81 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 9ns/91ns Switching Energy: 110µJ (on), 80µJ (off) Test Condition: 400V, 6A, 50Ohm, 15V Gate Charge: 13.5 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 18 A Power - Max: 96 W |
Produkt ist nicht verfügbar |
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| AOD6B65MQ1E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 38W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 38W Case: TO252 Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |