AOK065V120X2Q Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Power Dissipation (Max): 187.5W (Tj)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.23 EUR |
| 10+ | 21.42 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details AOK065V120X2Q Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V, Power Dissipation (Max): 187.5W (Tj), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-247, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AOK065V120X2Q
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AOK065V120X2Q | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 29.6A Power dissipation: 187.5W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 90mΩ Mounting: THT Gate charge: 62.3nC Kind of channel: enhancement Application: automotive industry Kind of package: tube Pulsed drain current: 85A Technology: SiC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOK065V120X2Q |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29.6A
Power dissipation: 187.5W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 62.3nC
Kind of channel: enhancement
Application: automotive industry
Kind of package: tube
Pulsed drain current: 85A
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29.6A
Power dissipation: 187.5W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 62.3nC
Kind of channel: enhancement
Application: automotive industry
Kind of package: tube
Pulsed drain current: 85A
Technology: SiC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH