AOK065V65X2 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 40.3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Power Dissipation (Max): 187.5W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 400 V
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.48 EUR |
| 10+ | 15.75 EUR |
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Technische Details AOK065V65X2 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 40.3A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V, Power Dissipation (Max): 187.5W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 400 V.