AOT3N100 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.8A; 132W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.8A
Power dissipation: 132W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 15nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 537 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 118+ | 0.61 EUR |
| 125+ | 0.57 EUR |
| 130+ | 0.55 EUR |
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Technische Details AOT3N100 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 1000V 2.8A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V.
Weitere Produktangebote AOT3N100 nach Preis ab 0.55 EUR bis 0.63 EUR
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AOT3N100 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.8A; 132W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.8A Power dissipation: 132W Case: TO220 Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Kind of channel: enhancement Gate charge: 15nC |
auf Bestellung 537 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT3N100 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 1000V 2.8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V |
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