AOT502

AOT502 Alpha & Omega Semiconductor


aot502.pdf Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 33V 60A 3-Pin(3+Tab) TO-220 Tube
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Technische Details AOT502 Alpha & Omega Semiconductor

Description: MOSFET N-CH 33V 9A/60A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V, Power Dissipation (Max): 1.9W (Ta), 79W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 33 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V.

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AOT502 AOT502 Hersteller : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 33V 9A/60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.9W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 33 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH