AOT5B65M1 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: IGBT 650V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 83 W
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.03 EUR |
| 50+ | 1.61 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.19 EUR |
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Technische Details AOT5B65M1 Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 8.5ns/106ns, Switching Energy: 80µJ (on), 70µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 14 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 83 W.
Weitere Produktangebote AOT5B65M1
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Verfügbarkeit |
Preis |
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AOT5B65M1 | Hersteller : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 10A 83000mW 3-Pin(3+Tab) TO-220 Tube |
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AOT5B65M1 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 5A; 42W; TO220; Eoff: 0.07mJ; Eon: 0.08mJ Mounting: THT Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.57V Collector current: 5A Pulsed collector current: 15A Turn-on time: 21ns Turn-off time: 161ns Type of transistor: IGBT Power dissipation: 42W Kind of package: tube Gate charge: 14nC Turn-on switching energy: 0.08mJ Turn-off switching energy: 0.07mJ Case: TO220 Collector-emitter voltage: 650V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AOT5B65M1 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 5A; 42W; TO220; Eoff: 0.07mJ; Eon: 0.08mJ Mounting: THT Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.57V Collector current: 5A Pulsed collector current: 15A Turn-on time: 21ns Turn-off time: 161ns Type of transistor: IGBT Power dissipation: 42W Kind of package: tube Gate charge: 14nC Turn-on switching energy: 0.08mJ Turn-off switching energy: 0.07mJ Case: TO220 Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |