AOT5B65M1

AOT5B65M1 Alpha & Omega Semiconductor Inc.


AOB5B65M1.pdf Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 83 W
auf Bestellung 630 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
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50+1.61 EUR
100+1.46 EUR
500+1.19 EUR
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Technische Details AOT5B65M1 Alpha & Omega Semiconductor Inc.

Description: IGBT 650V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 8.5ns/106ns, Switching Energy: 80µJ (on), 70µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 14 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 83 W.

Weitere Produktangebote AOT5B65M1

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AOT5B65M1 AOT5B65M1 Hersteller : Alpha & Omega Semiconductor 79aot5b65m1.pdf Trans IGBT Chip N-CH 650V 10A 83000mW 3-Pin(3+Tab) TO-220 Tube
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AOT5B65M1 AOT5B65M1 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C1DAADA85820&compId=AOT5B65M1.pdf?ci_sign=20ea73b9bba8e49d5434bbae15cefb7e2cf9f24c Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 42W; TO220; Eoff: 0.07mJ; Eon: 0.08mJ
Mounting: THT
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.57V
Collector current: 5A
Pulsed collector current: 15A
Turn-on time: 21ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 42W
Kind of package: tube
Gate charge: 14nC
Turn-on switching energy: 0.08mJ
Turn-off switching energy: 0.07mJ
Case: TO220
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT5B65M1 AOT5B65M1 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB82531ED9A6B1C1DAADA85820&compId=AOT5B65M1.pdf?ci_sign=20ea73b9bba8e49d5434bbae15cefb7e2cf9f24c Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 42W; TO220; Eoff: 0.07mJ; Eon: 0.08mJ
Mounting: THT
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.57V
Collector current: 5A
Pulsed collector current: 15A
Turn-on time: 21ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 42W
Kind of package: tube
Gate charge: 14nC
Turn-on switching energy: 0.08mJ
Turn-off switching energy: 0.07mJ
Case: TO220
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH