Produkte > ALPHA & OMEGA SEMICONDUCTOR > AOTF5B65M1
AOTF5B65M1

AOTF5B65M1 ALPHA & OMEGA SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB752F1EE897EB2C4C11F4D3D7&compId=AOTF5B65M1.pdf?ci_sign=8bfffe9b63c25acdb5b1c4ba139126f75d1b14b6 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 10W; TO220F; Eoff: 0.12mJ; Eon: 0.09mJ
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.87V
Collector current: 5A
Pulsed collector current: 15A
Turn-on time: 21ns
Turn-off time: 157ns
Type of transistor: IGBT
Power dissipation: 10W
Kind of package: tube
Gate charge: 14nC
Turn-on switching energy: 0.09mJ
Turn-off switching energy: 0.12mJ
Mounting: THT
Case: TO220F
Anzahl je Verpackung: 1 Stücke
auf Bestellung 342 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
109+0.66 EUR
120+0.6 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOTF5B65M1 ALPHA & OMEGA SEMICONDUCTOR

Description: IGBT 650V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 8.5ns/106ns, Switching Energy: 80µJ (on), 70µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 14 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 25 W.

Weitere Produktangebote AOTF5B65M1 nach Preis ab 0.54 EUR bis 2.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOTF5B65M1 AOTF5B65M1 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE897EB2C4C11F4D3D7&compId=AOTF5B65M1.pdf?ci_sign=8bfffe9b63c25acdb5b1c4ba139126f75d1b14b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 10W; TO220F; Eoff: 0.12mJ; Eon: 0.09mJ
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.87V
Collector current: 5A
Pulsed collector current: 15A
Turn-on time: 21ns
Turn-off time: 157ns
Type of transistor: IGBT
Power dissipation: 10W
Kind of package: tube
Gate charge: 14nC
Turn-on switching energy: 0.09mJ
Turn-off switching energy: 0.12mJ
Mounting: THT
Case: TO220F
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
120+0.6 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
AOTF5B65M1 AOTF5B65M1 Hersteller : Alpha & Omega Semiconductor Inc. AOTF5B65M1.pdf Description: IGBT 650V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 25 W
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
11+1.75 EUR
100+1.24 EUR
500+1 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AOTF5B65M1 AOTF5B65M1 Hersteller : Alpha & Omega Semiconductor aotf5b65m1.pdf Trans IGBT Chip N-CH 650V 10A 25mW 3-Pin(3+Tab) TO-220F Tube
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