AOW11S60

AOW11S60 Alpha & Omega Semiconductor


aow11s60.pdf Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AOW11S60 Alpha & Omega Semiconductor

Description: MOSFET N-CH 600V 11A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V.

Weitere Produktangebote AOW11S60

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOW11S60 Hersteller : ALPHA & OMEGA SEMICONDUCTOR TO262.pdf AOW11S60 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOW11S60 AOW11S60 Hersteller : Alpha & Omega Semiconductor Inc. TO262.pdf Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH