AOWF7S60

AOWF7S60 ALPHA & OMEGA SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB752F1ED8809C96CEF6C2EA18&compId=AOWF7S60.pdf?ci_sign=9c00b4b38605801017b6a099cad0659d462f23d6 Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 8.2nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 956 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
77+0.93 EUR
84+0.86 EUR
107+0.67 EUR
113+0.63 EUR
500+0.61 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOWF7S60 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 600V 7A TO262F, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: TO-262F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V.

Weitere Produktangebote AOWF7S60 nach Preis ab 0.61 EUR bis 0.93 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AOWF7S60 AOWF7S60 Hersteller : ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED8809C96CEF6C2EA18&compId=AOWF7S60.pdf?ci_sign=9c00b4b38605801017b6a099cad0659d462f23d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 8.2nC
Kind of channel: enhancement
auf Bestellung 956 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
84+0.86 EUR
107+0.67 EUR
113+0.63 EUR
500+0.61 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
AOWF7S60 AOWF7S60 Hersteller : Alpha & Omega Semiconductor Inc. AOWF7S60.pdf Description: MOSFET N-CH 600V 7A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH