AOWF7S60 ALPHA & OMEGA SEMICONDUCTOR
auf Bestellung 968 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 0.85 EUR |
| 88+ | 0.82 EUR |
| 93+ | 0.77 EUR |
| 500+ | 0.74 EUR |
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Technische Details AOWF7S60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 7A TO262F, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: TO-262F, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V.
Weitere Produktangebote AOWF7S60
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AOWF7S60 | Hersteller : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 600V 7A TO262FPackaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-262F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V |
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