APT1001R6BFLLG MICROCHIP TECHNOLOGY
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Technische Details APT1001R6BFLLG MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 1000V 8A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V, Power Dissipation (Max): 266W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V.
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APT1001R6BFLLG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube |
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APT1001R6BFLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V |
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