APT1001RSVRG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.78 EUR |
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Technische Details APT1001RSVRG MICROCHIP (MICROSEMI)
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A, Case: D3PAK, Mounting: SMD, Technology: POWER MOS 5®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 44A, Drain-source voltage: 1kV, Drain current: 11A, On-state resistance: 1Ω, Type of transistor: N-MOSFET, Power dissipation: 280W, Polarisation: unipolar, Gate charge: 225nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT1001RSVRG nach Preis ab 24.78 EUR bis 24.78 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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APT1001RSVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: D3PAK Mounting: SMD Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1001RSVRG | Hersteller : Microchip Technology | Trans MOSFET N-CH 1KV 11A 3-Pin(2+Tab) D3PAK Tube |
Produkt ist nicht verfügbar |
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APT1001RSVRG | Hersteller : MICROSEMI |
Power MOSFET Transistor APT1001 Anzahl je Verpackung: 31 Stücke |
Produkt ist nicht verfügbar |