APT1001RSVRG MICROCHIP TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A, Mounting: SMD, Pulsed drain current: 44A, Power dissipation: 280W, Gate charge: 225nC, Polarisation: unipolar, Technology: POWER MOS 5®, Drain current: 11A, Kind of channel: enhancement, Drain-source voltage: 1kV, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: tube, Case: D3PAK, On-state resistance: 1Ω.