APT1201R4SFLLG Microchip / Microsemi
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Technische Details APT1201R4SFLLG Microchip / Microsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK, Drain-source voltage: 1.2kV, Drain current: 9A, Case: D3PAK, On-state resistance: 1.5Ω, Pulsed drain current: 36A, Power dissipation: 300W, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Kind of package: tube, Mounting: SMD, Type of transistor: N-MOSFET, Kind of channel: enhancement, Polarisation: unipolar, Gate charge: 75nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT1201R4SFLLG
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APT1201R4SFLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK Drain-source voltage: 1.2kV Drain current: 9A Case: D3PAK On-state resistance: 1.5Ω Pulsed drain current: 36A Power dissipation: 300W Technology: POWER MOS 7® Gate-source voltage: ±30V Kind of package: tube Mounting: SMD Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 75nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1201R4SFLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 36A; 300W; D3PAK Drain-source voltage: 1.2kV Drain current: 9A Case: D3PAK On-state resistance: 1.5Ω Pulsed drain current: 36A Power dissipation: 300W Technology: POWER MOS 7® Gate-source voltage: ±30V Kind of package: tube Mounting: SMD Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 75nC |
Produkt ist nicht verfügbar |