APT1201R5BVFRG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
Case: TO247-3
On-state resistance: 1.5Ω
Pulsed drain current: 40A
Power dissipation: 370W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 285nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
Case: TO247-3
On-state resistance: 1.5Ω
Pulsed drain current: 40A
Power dissipation: 370W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 285nC
Anzahl je Verpackung: 1 Stücke
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Technische Details APT1201R5BVFRG MICROCHIP TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A, Drain-source voltage: 1.2kV, Drain current: 10A, Case: TO247-3, On-state resistance: 1.5Ω, Pulsed drain current: 40A, Power dissipation: 370W, Technology: POWER MOS 5®, Gate-source voltage: ±30V, Kind of package: tube, Mounting: THT, Type of transistor: N-MOSFET, Kind of channel: enhancement, Polarisation: unipolar, Gate charge: 285nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT1201R5BVFRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| APT1201R5BVFRG | Hersteller : Microsemi | MOSFET Power FREDFET - MOS5 |
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APT1201R5BVFRG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Drain-source voltage: 1.2kV Drain current: 10A Case: TO247-3 On-state resistance: 1.5Ω Pulsed drain current: 40A Power dissipation: 370W Technology: POWER MOS 5® Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 285nC |
Produkt ist nicht verfügbar |