APT1201R5BVFRG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 370W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 285nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
On-state resistance: 1.5Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 370W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 285nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Drain current: 10A
On-state resistance: 1.5Ω
Anzahl je Verpackung: 1 Stücke
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Technische Details APT1201R5BVFRG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A, Technology: POWER MOS 5®, Mounting: THT, Power dissipation: 370W, Case: TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 285nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 40A, Drain-source voltage: 1.2kV, Drain current: 10A, On-state resistance: 1.5Ω, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT1201R5BVFRG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT1201R5BVFRG | Hersteller : Microsemi | MOSFET Power FREDFET - MOS5 |
Produkt ist nicht verfügbar |
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APT1201R5BVFRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Technology: POWER MOS 5® Mounting: THT Power dissipation: 370W Case: TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 285nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 40A Drain-source voltage: 1.2kV Drain current: 10A On-state resistance: 1.5Ω |
Produkt ist nicht verfügbar |