APT5028BVRG Microchip Technology
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Technische Details APT5028BVRG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A, Power dissipation: 250W, Polarisation: unipolar, Gate charge: 175nC, Technology: POWER MOS 5®, Kind of channel: enhanced, Pulsed drain current: 80A, Gate-source voltage: ±30V, Mounting: THT, Case: TO247-3, Drain-source voltage: 500V, Drain current: 20A, On-state resistance: 0.28Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT5028BVRG
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APT5028BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A Power dissipation: 250W Polarisation: unipolar Gate charge: 175nC Technology: POWER MOS 5® Kind of channel: enhanced Pulsed drain current: 80A Gate-source voltage: ±30V Mounting: THT Case: TO247-3 Drain-source voltage: 500V Drain current: 20A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5028BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A Power dissipation: 250W Polarisation: unipolar Gate charge: 175nC Technology: POWER MOS 5® Kind of channel: enhanced Pulsed drain current: 80A Gate-source voltage: ±30V Mounting: THT Case: TO247-3 Drain-source voltage: 500V Drain current: 20A On-state resistance: 0.28Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |