AS3D020065A ANBON SEMICONDUCTOR (INT'L) LIMITED
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITEDDescription: 650V,20A SILICON CARBIDE SCHOTTK
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.41 EUR |
| 10+ | 6.22 EUR |
| 100+ | 5.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AS3D020065A ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 650V,20A SILICON CARBIDE SCHOTTK, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1190pF @ 0V, 1MHz, Current - Average Rectified (Io): 56A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.