AUIRFSL4010-313TRL Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO262
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
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Technische Details AUIRFSL4010-313TRL Infineon Technologies
Description: MOSFET N-CH 100V 180A TO262, Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-262-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Qualification: AEC-Q101, Grade: Automotive, Packaging: Tape & Reel (TR).