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B1D08065KS

B1D08065KS BASiC SEMICONDUCTOR

B1D08065KS.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Mounting: THT
Max. forward impulse current: 64A
Max. forward voltage: 1.73V
Power dissipation: 32W
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 10µA
Case: TO220ISO
Type of diode: Schottky rectifying
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Technische Details B1D08065KS BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA, Mounting: THT, Max. forward impulse current: 64A, Max. forward voltage: 1.73V, Power dissipation: 32W, Technology: SiC, Max. off-state voltage: 650V, Load current: 8A, Kind of package: tube, Semiconductor structure: single diode, Leakage current: 10µA, Case: TO220ISO, Type of diode: Schottky rectifying.