B1D10065H

B1D10065H BASiC SEMICONDUCTOR


B1D10065H.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 68W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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Technische Details B1D10065H BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA, Case: TO247-2, Mounting: THT, Kind of package: tube, Leakage current: 20µA, Max. forward voltage: 1.75V, Load current: 10A, Max. forward impulse current: 75A, Power dissipation: 68W, Max. off-state voltage: 650V, Semiconductor structure: single diode, Technology: SiC, Type of diode: Schottky rectifying.