B1D10065H BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 68W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 9+ | 7.95 EUR |
| 23+ | 3.1 EUR |
| 150+ | 1.89 EUR |
| 600+ | 1.86 EUR |
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Technische Details B1D10065H BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Case: TO247-2, Max. forward voltage: 1.75V, Max. forward impulse current: 75A, Leakage current: 20µA, Kind of package: tube, Power dissipation: 68W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1D10065H nach Preis ab 23.84 EUR bis 23.84 EUR
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B1D10065H | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.75V Max. forward impulse current: 75A Leakage current: 20µA Kind of package: tube Power dissipation: 68W |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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