B1D16065HC BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 73W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 30+ | 3.16 EUR |
| 150+ | 3.02 EUR |
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Technische Details B1D16065HC BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 8A x2, Semiconductor structure: common cathode; double, Case: TO247-3, Max. forward voltage: 1.75V, Max. forward impulse current: 60A, Leakage current: 10µA, Kind of package: tube, Max. load current: 16A, Power dissipation: 73W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1D16065HC nach Preis ab 23.84 EUR bis 23.84 EUR
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B1D16065HC | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Max. load current: 16A Power dissipation: 73W |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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