B1D16065HC BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 30+ | 3.16 EUR |
| 150+ | 3.02 EUR |
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Technische Details B1D16065HC BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA, Mounting: THT, Kind of package: tube, Semiconductor structure: common cathode; double, Type of diode: Schottky rectifying, Technology: SiC, Leakage current: 10µA, Max. forward voltage: 1.75V, Power dissipation: 73W, Load current: 8A x2, Max. load current: 16A, Max. forward impulse current: 60A, Max. off-state voltage: 650V, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1D16065HC nach Preis ab 23.84 EUR bis 23.84 EUR
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B1D16065HC | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Max. forward voltage: 1.75V Power dissipation: 73W Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Max. off-state voltage: 650V Case: TO247-3 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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